top of page
This site was designed with the
.com
website builder. Create your website today.Start Now

International Conference

Conference

  1. Abhirup Sarkar; Ayushman Khetan; Leonell John; Hussain Sabunwala; Eshan Gupta; Aditya Jain, A. Kumar, N. Gupta., "Design and Development of Dual Loop Motion Control System for BLDC motor," 2023 2nd International Conference for Innovation in Technology (INOCON), Bangalore, India, 2023, pp. 1-6, doi: 10.1109/INOCON57975.2023.10101075.

  2. A. Kumar, M. S. Thomas, N. Gupta and A. Jain, "Performance Evaluation of Lead-Free Cs2CuSbCl6 Perovskite Solar Cells for > 21.67% Efficiency," 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2022, pp. 215-216, doi: 10.1109/NUSOD54938.2022.9894835.

  3. A. Kumar, M. S. Thomas, G. Pareek, A. Jain and N. Gupta, "Performance Evolution of GaAs-Based Solar Cell Towards >30% Efficiency for Space Applications" IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO 2022) Mangalam College of Engineering, Ettumanoor, Kottayam, Kerala, India. 28th & 29th April, 2022.

  4. A. Kumar, N. Gupta, A. K. Goyal and Y. Massoud "RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters" IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO 2022) Mangalam College of Engineering, Ettumanoor, Kottayam, Kerala, India. 28th & 29th April, 2022.

  5. N. Gupta, S. Singh, R. Chaujar and A. Kumar, “Static and Thermal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET for Temperature Tolerance Applications”, National E-Conference on Recent Advancements in Science and Technology (NECRAST 2020) 27th-28th July, ADGITM, New Delhi, 2020.

  6. A. Kumar, U. Gupta, Tanya, and N. Gupta, “Simulation of Perovskite Solar Cell Employing ZnO as Electron Transport Layer (ETL) for Improved Efficiency”, Innovative Manufacturing, Mechatronics & Materials Forum 2020 (iM3F 2020) 6th August 2020, University Malaysia Pahang.

  7. A. Kumar, S. Saini, A. Gupta, N. Gupta, M. M. Tripathi and R. Chaujar, "Sub-10 nm High-k Dielectric SOI-FinFET for HighPerformance Low Power Applications," 2020 6th International Conference on Signal Processing and Communication (ICSC), Noida, India, 2020, pp. 310-314, doi: 10.1109/ICSC48311.2020.9182748.

  8. N. Gupta, A. Kumar, R. Chaujar, B. Kumar and M. M. Tripathi, "Gate Engineered GAA Silicon-Nanowire MOSFET for High Switching Performance," 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), Kolkata, India, 2020, pp. 258-262, doi: 10.1109/VLSIDCS47293.2020.9179932.

  9. A. Kumar, N. Gupta, S. Singh, B. Tiwari, M. M. Tripathi and R. Chaujar, "Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications," TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON), 2019, pp. 2564-2567, doi: 10.1109/TENCON.2019.8929540.

  10. A. Kumar, N. Gupta, M. M. Tripathi, and R. Chaujar, “Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications”, IEEE International Conference on Modern Circuits and Systems Technologies (MOCAST), Thessaloniki, Greece, 13th to 15th May 2019. DOI: 10.1109/MOCAST.2019.8742066.

  11. A. Kumar, S. K. Tripathi, N. Gupta, P. M. Tripathi and R. Chaujar, "GaN Silicon-on-Insulator (SOI) N-Channel FinFET for High-Performance Low Power Applications," 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden, 2019, pp. 1-4, doi: 10.1109/NMDC47361.2019.9084011.

  12.  A. Kumar, N. Gupta, S. Singh, B. Tiwari, M. M. Tripathi and R. Chaujar, "Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications," TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON), Kochi, India, 2019, pp. 2564-2567, doi: 10.1109/TENCON.2019.8929540.

  13. A. Kumar, N. Gupta, MM Tripathi, and R. Chaujar, “Ultra-Sensitive Black Phosphorus Junctionless Recessed Channel MOSFET for Biosensing Application” 7th International Conference on ‘Computing, Communication and Sensor Networks’, CCSN2018, October, 27th - 28th, 2018, Kolkata, W.B, India.

  14. A. Kumar, N. Gupta, MM Tripathi, and R. Chaujar, “High-Temperature Reliability Assessment of Sub-20 nm Black Phosphorus Trench (BP-T) MOSFET” 7th International Conference on ‘Computing, Communication and Sensor Networks’, CCSN2018, October, 27th - 28th, 2018, Kolkata, W.B, India.

  15. Neha Gupta, Arshiya Vohra and Rishu Chaujar, “Linearity Performance of Gate Metal Engineered (GME) Omega Gate-Silicon Nanowire MOSFET: A TCAD Study”, IEEE EDSSC- 2016, pp. 208 – 211, Hong Kong, 3-5 Aug. 2016. Doi: 10.1109/EDSSC.2016.7785245

  16. A. Kumar, N. Gupta and R. Chaujar, “Analysis of Small Signal Behaviour of Transparent Gate Recessed Channel (TGRC) MOSFET for High Frequency/RF Applications” Tech-Connect World Innovation Conference & Expo, pp. 193-195, June 14-17, 2015, Washington DC, USA. ISBN: 978-1- 4987-4730-1.

  17. A. Kumar, N. Gupta and R. Chaujar, “Impact of Parameter Variation on the Hot-Carrier-Effect Immunity for Transparent Gate Recessed Channel (TGRC) MOSFET”, 2nd International Conference on Microelectronics, Circuits and Systems MICRO-2015, pp. 36-39, Kolkata, 11-12th July, 2015. ISBN: 81-85824-46-0.

  18. A. Kumar, N. Gupta and R. Chaujar, “Highly Conductive ITO Based Transparent Gate Recessed Channel MOSFET for Improved RF Performance”, IWPSD-2015, Bangalore, 7-10 December 2015.PP.359.

  19. N. Gupta, A. Kumar and R. Chaujar, “TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic parameters of GEWE-SiNW MOSFET”, Tech-Connect World Innovation Conference & Expo, pp. 185-188, 14-17th June 2015, Washington DC, USA. DOI: 10.13140/RG.2.1.3867.6322.

  20. N. Gupta, A. Kumar and R. Chaujar, “TCAD AC Analysis of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET for High Frequency Applications”, Tech-Connect World Innovation Conference & Expo, pp. 181-184, 14-17th June 2015, Washington DC, USA.

  21. N. Gupta, A. Kumar and R. Chaujar, “Effect of Dielectric Engineering on Analog and Linearity performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET”, 15th International Conference on Nanotechnology, 27 - 30 July 2015, ROME (ITALY), pp. 928-931, DOI: 10.1109/NANO.2015.7388768.

  22. N. Gupta, A. Kumar and R. Chaujar, “Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire (SiNW) MOSFET: A Solution for LNA at RF Frequency”, 2nd International Conference on Microelectronics, Circuits and Systems MICRO-2015, Kolkata, pp. 52-56, 11-12th July, 2015. ISBN: 81-85824-46-0. DOI:10.13140/RG.2.1.2441.5209.

  23. N. Gupta, A. Kumar and R. Chaujar, “Quantum Mechanical C-V Analysis of Gate Electrode Work function Engineered (GEWE) Silicon Nanowire MOSFET for HF Applications”, IWPSD-2015, Bangalore, 7-10 December 2015.PP.360.

  24. A. Kumar, R. Chaujar, and N. Gupta, “Novel Design: Transparent Gate Recessed Channel (TGRC) MOSFET for Improved Reliability Applications”, IEEE 1st International conference on Microelectronics, Circuits and Systems”, Kolkata, India, 2014, pp.1-5. ISBN: 81-85824-46-0.

  25. A. Kumar, N. Gupta and R. Chaujar, “Intrinsic delay and power gain assessment of Transparent Gate Recessed Channel MOSFET for high performance RF/Wireless Applications, 3rd International Conference NANOCON 014, Bharti Vidyapeeth Deemed University Pune, 14-15th October, 2014.

  26. N. Gupta, A. Kumar and R. Chaujar, “Simulation analysis of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET for hot carrier reliability” IEEE 1st International Conference on Microelectronics, Circuits and Systems”, Kolkata, pp. 150-153, 11-13th July, 2014.

  27.  N. Gupta, A. Kumar and R. Chaujar, “Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency”, Fifth International Symposium on Electronic System Design, Mangalore, Karnataka, pp. 192-196, 15-17th December, 2014. doi 10.1109/ISED.2014.46.

bottom of page